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| IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Features Q #451<6 B 78 65AE5>3 I C D89 ? 89 B G9 >7 3 Q ( @D J54 D 8>? < 7I 6 B 3 ? >F D C 9 =9 53 ? ? 5B 5B Q H3 5<5>D 5 3 81B HR 9H"[Z# @B 4E3 D ( & < 71D 75 ? Q' 3 81>>5< >? B < 5< =1< 5F Q 1F 1>3 85 D D 1< 5C 54 Q) 2 655 @< 9 + ? " , 3 ? =@<1>D B 1D >7 9 Q* E1<654 13 3 ? B >7 D $ 9 9 49 ? )# TM Product Summary V 9H R , ? >=1H, & I9 0( )+&. ,- J Y" 6 6 B 1B 1@@<3 1D >C ? D 75D 99 ? Q" 1< 75>655 13 3 ? B >7 D # ? B 49 ? Type #) ) ' ' ! #) # ' ' ! #) ' ' ! Package Marking E=%ID%**(%+ )+1C(0C E=%ID%*.*%+ )+1C(0C E=%ID%*.+%+ )+.C(0C Maximum ratings, 1D V T E>< C ? D G95 C 954 T 5C 85B C @53 6 9 Parameter ? >D EC 4B > 3 EB5>D 9 >E? 19 B Symbol Conditions I9 T 8 T T 8 T ) E< 54 4B > 3 EB5>D C 19 B *# F 1>3 85 5>5B C>7< @E< 5+# 1< 7I 9 5 C !1D C EB5 F <175 5? 3 ?D ) ? G5B C 9 9 > 49C@1D ? ( @5B 9 1>4 C ? B D 1D >7 D 175 5=@5B EB 1D 5 # 3 <=1D 3 1D B #' # 99 3 57? I )# *# Value ,+1 )0( -( q*( Unit 6 I 9$\aX_Q E 6H V =H P [ T V T _S T 8 T I 9 R =H " Y@ J K T T 8 T /1 $ , - 1>4 $ , , 55 67EB 6 B B 45D < 9 ? B 9 > 9 5 ? =? 5 19 >6 =1D 54 ? +# , 55 67EB 6 B B 45D < 9 ? B 9 > 95 ? =? 5 19 >6 =1D 54 ? + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G Parameter Symbol Conditions min. Thermal characteristics -85B B 9D 5 :E>3 D > 3 1C =1< 5CC 1>3 9 ? 5 -85B B 9D 5 =1< 5CC 1>3 :E>3 D > 1=2 9 9 ? 5>D R T@8 R T@6 =9 =1<6 ? D 9 >9 ? @B >D 3 = * 3 ? ? <>7 1B ,# 9 51 % % % % )&1 ,( A'K Values typ. max. Unit Electrical characteristics, 1D V T E>< C ? D G95 C 954 T 5C 85B C @53 6 9 Static characteristics B >C EB5 2 B 19 ? 3 51;4? G> F <175 ?D !1D D 5C < F <175 5 8B 8? 4 ? D 05B 71D F <175 4B > 3 EB5>D ? 5 ?D 19 B V "7G#9HH V =H . I 9 = V =H"T# I 9HH V 9H4V =H I 9 V V 9H . V =H . T V T V 9H . V =H . T V T !1D ? EB5 < 5C 3 51;175 3 EB5>D B B >C EB5 ? >C 1D B 9D 5 19 ? 3 D 5 5CC 1>3 I =HH R 9H"[Z# V =H . V 9H . V =H . I 9 V =H . I 9 B >C EB5 ? >C 1D B 9D 5 19 ? 3 D 5 5CC 1>3 R 9H"[Z# V =H . I 9 "HB9# V =H . I 9 "HB9# !1D B 9D 5 5 5CC 1>3 I^MZ_O[ZPaOMZOQ R= g R_ gV 9Hg5*gI 9gR 9H"[Z#YMd I 9 0( * % % *&0 (&) % +&) r6 J % % % % % )( ) ))&0 ).&( ))&- )(( )(( )+&1 *. )+&. Z6 Y" % % *, ).&( * ,0 *.&( % % " H ,# 5F3 5 ? > == H == H == 5@? HI ) 9 3 ? >>53 D > ) 9 F D 1<9 C 9 19 9 ? C 5B3 9 > D< B < + G9 3 =* ? >5 < D 8 1I5B V = D 3 ; 3 ? @@5B 51 6 B 19 89 1B ? 4B > + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G Parameter Symbol Conditions min. Dynamic characteristics #>@ED 1@13 9 5 3 D 1>3 ( ED 3 1@13 9 5 @ED D 1>3 + 5F C D1>C 5B 1@13 9 5 5B5 B 6 3 D 1>3 -EB > 45< D >? 1I 9 =5 + 95 D C9 =5 -EB 6 45< D >? 6 1I 9 =5 1< D <9 =5 !1D 81B 81B D 9D C-# 5 S5 13 5B 9 C3 !1D D C EB5 3 81B 5? ? 3 75 !1D D 4B > 3 81B 5 ? 19 75 , G9 89 3 81B D >7 3 75 !1D 3 81B D D 5 75 ? 1< !1D @< 51E F <175 5 1D ?D ( ED 3 81B @ED 75 Reverse Diode 9 45 3 ? >D EC 6 B 4 3 EB5>D ? 9 >? ? G1B B 9 45 @E< 5 3 EB5>D ? C B 9 45 6 B 4 F <175 ? ? G1B ? D + 5F C B ? F I D 5B5 53 5B 9 =5 + 5F C B ? F I 3 81B 5B5 53 5B 75 -# Values typ. max. Unit C U__ C [__ C ^__ t P"[Z# t^ t P"[RR# tR V 99 . V =H . I 9 R = " V =H . V 9H . f & " J % % % % % % % )+(( +-+ ))* +)0 - )/+( ,.1 % % % % % \< Z_ Q S_ Q SP Q _c QS V \XMQMa Q [__ V 99 . V =H . V 99 . I 9 V =H D . ? % % % % % % / , 0 )1 -&*- % % % *% +, Z8 J Z8 IH I H$\aX_Q V H9 t ^^ Q ^^ % T 8 T % V =H . I < T V T V G . I <4I H Pi <'Pt V C % % % % % )&( -( /, ,)0( )&* % % 6 J Z_ Z8 , 55 67EB 6 B 5 3 81B @1B 95 ? 71D 75 1=5D 456>9? > 5B 9 D 9 + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 1 Power dissipation P [4R"T 8# 2 Drain current I 94R"T 8 V =H" . 80 50 40 60 30 P tot [W] 40 I D [A] 20 10 0 0 50 100 150 200 0 50 100 150 200 20 0 T C [C] T C [C] 3 Safe operating area I 94R"V 9H T 8 T D 4( @1B 1=5D t \ 5B 103 4 Max. transient thermal impedance Z T@84R"t \# @1B 1=5D D 4t \'T 5B 101 <=9 2 I ? >C 1D 9D 54 D5 ^Q_U_MZOQ VC 10 2 100 VC (&- Z thJC [K/W] I D [A] (&* (&) (&((&(* V C =C 101 =C 10-1 (&() C>7< @E< 5 95 C 98 100 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 5 Typ. output characteristics I 94R"V 9H T V T @1B 1=5D V =H 5B 150 . . . . . . 6 Typ. drain-source on resistance R 9H"[Z#4R"I 9 T V T @1B 1=5D V =H 5B 30 . 100 . 20 R DS(on) [m ] I D [A] . . . . 50 . 10 . . 0 0 1 2 3 4 5 0 0 40 80 120 V DS [V] I D [A] 7 Typ. transfer characteristics I 94R"V =H K 9Hg5*gI 9gR 9H"[Z#YMd V @1B 1=5D T V 5B 120 8 Typ. forward transconductance g R_4R"I 9 T V T 80 60 80 g fs [S] 40 T T I D [A] 40 20 0 0 2 4 6 8 0 0 20 40 60 80 100 V GS [V] I D [A] + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 9 Drain-source on-state resistance R 9H"[Z#4R"T V I 9 V =H . 10 Typ. gate threshold voltage V =H"T#4R"T V V =H4V 9H @1B 1=5D I 9 5B 30 4 25 3 20 V R DS(on) [m ] V YMd 15 e\ V GS(th) [V] 100 140 180 2 10 1 5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C 4R"V 9H V =H . f & " J 12 Forward characteristics of reverse diode I <4R"V H9# @1B 1=5D T V 5B 104 103 8U__ 103 8[__ 102 T T T C [pF] 102 8^__ I F [A] 101 T 101 100 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 V DS [V] V SD [V] + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 13 Avalanche characteristics I 6H4R"t 6J R =H " @1B 1=5D T V"_M^# 5B 100 14 Typ. gate charge V =H4R"Q SMQ I 9 @E< 54 C @1B 1=5D V 99 5B 12 . 10 . T 8 . 10 T V GS [V] 100 1000 I AV [A] 6 T 4 2 1 0.1 1 10 0 0 5 10 15 20 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V 7G"9HH#4R"T V I 9 = 16 Gate charge waveforms 90 V =H 85 Qg 80 V BR(DSS) [V] 75 V S _"T# 70 65 Q S "T# Q S_ -60 -20 20 60 100 140 180 Q _c Q SP Q g ate 60 T j [C] + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G PG-TO-263-3 (D-Pak) + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G PG-TO-262-3 (I-Pak) + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G PG-TO-220-3 + 5F @175 IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. + 5F @175 |
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